InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelength

Abstract

InP/Ga_xIn_1−xAs_yP_1−y/Ga_xIn_{1 −x} As_yP_1−y double‐heterostructure LED’s in a 1.5‐μm‐wavelength region have been fabricated by the LPE method. The half‐width value of the spectrum is about 1100 Å, and the external quantum efficiency is 1.5% for undoped active layers of Ga_0.28In_0.72As_0.77P_0.23. The threshold current density of the laser oscillation at 1.52 μm and 300 K is 10⁴ A/cm² μm. No symptom of an initial degradation has been observed.