Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes
- 1 March 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 22 (3), 471-478
- https://doi.org/10.1109/jqe.1986.1072969
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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