Effect of Mixing Hydrogen-Argon on Magnetron Sputtered SiO2 Films
- 1 February 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (2), L111-113
- https://doi.org/10.1143/jjap.20.l111
Abstract
Properties of magnetron sputtered SiO2 films prepared in a 30% hydrogen-70% argon mixed gas have been investigated in comparision with those prepared in argon alone. The results obtained are: (1) The film prepared in argon alone has a remarkable dependence on sputtering pressure, and has a porous film structure with abnormal etching rate, at pressures other than the critical pressure. (2) By mixing hydrogen in the argon, the dependence on sputtering pressure is removed and the SiO2 films are densified.Keywords
This publication has 7 references indexed in Scilit:
- Anomalous Etching Phenomenon of RF-Sputtered SiO2FilmsJapanese Journal of Applied Physics, 1979
- Calculation of deposition rates in diode sputtering systemsJournal of Vacuum Science and Technology, 1978
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977
- Topography of obliquely evaporated silicon oxide films and its effect on liquid-crystal orientationIEEE Transactions on Electron Devices, 1977
- Simulation of structural anisotropy and void formation in amorphous thin filmsApplied Physics Letters, 1974
- Step coverage in the vacuum deposition of thin metal filmsJournal of Vacuum Science and Technology, 1974
- Effect of vapour incidence angles on profile and properties of condensed filmsThin Solid Films, 1972