Resonant Fowler–Nordheim tunneling in n−GaAs-undoped AlxGa1−xAs-n+GaAs capacitors
- 1 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1), 90-92
- https://doi.org/10.1063/1.94564
Abstract
Periodic structure is observed in the current‐voltage characteristics at 4.2 K of n−GaAs‐AlxGa1−xAs‐n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa1−xAs thicknesses of 30–35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler–Nordheim tunneling.Keywords
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