Study of the kinetics and mechanism of the thermal nitridation of SiO2

Abstract

X‐ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO₂ films. The XPS data show that the maximum nitrogen concentration near the (SiO_xN_y)/Si interface is initially at the interface, but moves 20–25 Å away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen‐rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO₂. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.