Chemically prepared oxides on Si(001): an XPS study
- 20 June 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 290 (3), 239-244
- https://doi.org/10.1016/0039-6028(93)90707-q
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Silicon-hydrogen bonds in silicon oxide near the SiO2/Si interfaceApplied Surface Science, 1992
- XPS study on the early stages of oxidation of Si(100) by atomic oxygenSurface Science, 1989
- Chemical Bonds at and Near the SiO2/Si InterfaceJapanese Journal of Applied Physics, 1989
- General comparison of the surface processes involved in nitridation of Si(100)-2×1byand infilm deposition: a photoemission studyPhysical Review B, 1988
- Si-SiO2 Interface Structures–Chemical Shifts in Si 2p Photoelectron Spectra–Japanese Journal of Applied Physics, 1988
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Si(111) surface oxidation: O 1s core-level study using synchrotron radiationSurface Science, 1986
- Chemisorption of Atomic Oxygen on Si(100): Self-Consistent Cluster and Slab Model InvestigationsPhysical Review Letters, 1984
- Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfacesApplied Physics A, 1982
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979