Chemical Bonds at and Near the SiO2/Si Interface
- 1 August 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (8A), L1436
- https://doi.org/10.1143/jjap.28.l1436
Abstract
The concept of local electronegativity defined by Lucovsky1) was modified and applied to the study of the chemical bonds at and near the SiO2/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.Keywords
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