Electrical resistivity of amorphous Ni80−xMxB16Si4 alloys

Abstract

The electrical resistivity of amorphous Ni_80−xM_xB₁₆Si₄ alloys, M standing for any of the 3d transition metals, was studied in the temperature range ∼2–950 K. The resistivity versus M plots (at constant x) yield typical double‐peaked curves, with a minimum at Mn. The origin of this resistivity behaviour is discussed. All the samples show a resistivity minimum, probably due to Kondo effect, at T_min, which is strongly composition dependent. Negative temperature coefficients of resistivity found about room temperature for several alloys are the consequence of T_min lying well above room temperature for those alloys.