Fully-depleted SOI CMOS for analog applications
- 1 May 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (5), 1010-1016
- https://doi.org/10.1109/16.669511
Abstract
Fully-depleted (FD) SOI MOSFET's offer near- ideal properties for analog applications. In particular their high transconductance to drain current ratio allows one to obtain a higher gain than from bulk devices, and the reduced body effect permits one to fabricate more efficient pass gates. The excellent behavior of SOI MOSFET's at high temperature or at gigahertz frequencies is outlined as well.Keywords
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