On the capacitance–voltage characteristics of Al/BaTiO3/GaN MFS structures
- 30 April 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 1176-1179
- https://doi.org/10.1016/s0022-0248(01)02152-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Performance evaluation of high-power wide band-gap semiconductor rectifiersJournal of Applied Physics, 1999
- Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistorsApplied Physics Letters, 1998
- Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state densityApplied Physics Letters, 1998
- Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiersIEEE Transactions on Electron Devices, 1998
- High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistorIEEE Electron Device Letters, 1998
- Low interface trap density for remote plasma deposited SiO2 on n-type GaNApplied Physics Letters, 1996
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Growth of fcc Fe films on diamondApplied Physics Letters, 1994