Current-voltage characteristics of thin-film SOI MOSFET's in strong inversion
- 1 April 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (4), 401-408
- https://doi.org/10.1109/t-ed.1984.21540
Abstract
A simple analytic model for the steady-state current-voltage characteristics of strongly inverted silicon-on-insulator (SOI) MOSFET's is developed. The model, simplified by a key approximation that the inversion charge density is described well by a linear function of the Surface potential, clearly shows the dependence of the drain current on the device parameters and on the terminal voltages, including the back-gate (substrate) bias. The analysis is supported by measurements of current-voltage characteristics of thin-film (laser-recrystallized) SOI MOSFET's. The dependence of carrier mobility on the terminal voltages, especially the back-gate bias, is analyzed and shown to underlie discrepancies between the theoretical (constant mobility) and experimental results at high gate voltages. The mobility dependence on the back-gate bias enhances the strong influence of the back gate on the drain current, especially when the device is saturated.Keywords
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