Electron spin resonance study of hydrogenation effects in polycrystalline silicon
- 8 December 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (23), 1620-1622
- https://doi.org/10.1063/1.97247
Abstract
Electron spin resonance spectra obtained on polycrystalline silicon produced by annealing of chemical vapor deposition silicon are investigated before and after plasma hydrogenation of the material. Before hydrogenation, two paramagnetic defects are observed, one of them remaining unidentified (g=2.0084). Hydrogenation decreases the total spin density, but the two defects are affected differently; the defect with g=2.0084 is more efficiently passivated. The results are discussed in terms of the inter- and intragranular nature of the paramagnetic defects and of hydrogen diffusivity in the polycrystal.Keywords
This publication has 12 references indexed in Scilit:
- 29Si hyperfine measurements in a-Si:HJournal of Non-Crystalline Solids, 1985
- Electrical properties and ESR of undoped microcrystalline Si with a preferential orientationPhilosophical Magazine Part B, 1985
- Influence of hydrogen implantation on the resistivity of polycrystalline siliconJournal of Applied Physics, 1985
- Hydrogen passivation of dislocations in siliconApplied Physics Letters, 1984
- Spin-dependent hole diffusion in a-Si: HPhilosophical Magazine Part B, 1984
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Dependences of ESR and electrical properties on P doping ratio for microcrystalline SiPhysica B+C, 1983
- Plasma-hydrogenation effects on conductivity and electron spin resonance in undoped polycrystalline siliconJournal of Applied Physics, 1982
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982
- E.S.R. in doped CVD amorphous silicon filmsPhilosophical Magazine Part B, 1981