Heterointerface Field Effect Transistor with 200 A-Long Gate
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A), L2382
- https://doi.org/10.1143/jjap.27.l2382
Abstract
AlGaAs/GaAs heterointerface field effect transistor (FET) with a gate-length comparable with electron de Broglie wavelength has been fabricated for the first time by the electron-beam-induced resist process, which demonstrates the possibility of `universal' FET. The transconductance maximum is found to be at the gate length three times as large as the channel depth.Keywords
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