High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (12), 628-630
- https://doi.org/10.1109/edl.1985.26255
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- Noise behavior of 1-µm gate-length modulation-doped FET's from 10-2to 108HzIEEE Electron Device Letters, 1985
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers needIEEE Spectrum, 1984
- Design and fabrication of high transconductance modulation-doped (Al,Ga)As/GaAs FETsJournal of Vacuum Science & Technology B, 1983
- Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- Saturation velocity determination for In0.53Ga0.47As field-effect transistorsApplied Physics Letters, 1981
- Schottky barrier heights of molecular beam epitaxial metal-AlGaAs structuresApplied Physics Letters, 1981