Modal analysis of separate-confinement heterojunction lasers with inhomogeneous cladding layers

1 May 1983

journal article
Published by Optica Publishing Group in Optics Letters

Vol. 8 (5), 283-285
https://doi.org/10.1364/ol.8.000283

Abstract

Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.

Keywords

This publication has 9 references indexed in Scilit:

Diode laser threshold current density and lasing wavelength as functions of active region thickness
Applied Physics Letters, 1983
Continuous wave high-power, high-temperature semiconductor laser phase-locked arrays
Applied Physics Letters, 1982
Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxy
Applied Physics Letters, 1982
Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE
Electronics Letters, 1982
Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant
Electronics Letters, 1982
A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam
Applied Physics Letters, 1981
Ambipolar transport in double heterostructure injection lasers
IEEE Electron Device Letters, 1980
Quantum-well heterostructure lasers
IEEE Journal of Quantum Electronics, 1980
Quantum States of Confined Carriers in Very Thin ${Al}_{x} {Ga}_{1 - x} As$ -GaAs- ${Al}_{x} {Ga}_{1 - x} As$ Heterostructures
Physical Review Letters, 1974

Cited by 11 articles