Thickness dependent glass transition temperature of PECVD low-k dielectric thin films: effect of deposition methods
- 31 March 2002
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 33 (3), 221-227
- https://doi.org/10.1016/s0026-2692(01)00147-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Thickness-dependent thermal reliability of low-dielectric constant polycrystalline PTFE submicron dielectric thin filmsMicroelectronics Journal, 2001
- Thickness dependence of morphology and mechanical properties of on-wafer low-k PTFE dielectric filmsThin Solid Films, 2000
- Quantifying glass transition behavior in ultrathin free-standing polymer filmsPhysical Review E, 2000
- Thermal Probe Measurements of the Glass Transition Temperature for Ultrathin Polymer Films as a Function of ThicknessMacromolecules, 2000
- Thickness dependence of elastic modulus and hardness of on-wafer low-k ultrathin polytetrafluoroethylene filmsScripta Materialia, 2000
- In Search of Low- k DielectricsScience, 1999
- ILD thermal stability in deep-submicron technologies: from thin to ultrathin dielectric filmsPublished by SPIE-Intl Soc Optical Eng ,1999
- Effect of strongly favorable substrate interactions on the thermal properties of ultrathin polymer filmsPhysical Review E, 1996
- Size-Dependent Depression of the Glass Transition Temperature in Polymer FilmsEurophysics Letters, 1994
- Interface and surface effects on the glass-transition temperature in thin polymer filmsFaraday Discussions, 1994