Si Etch Rate and Etch Yield with Ar+/Cl2 System
- 1 December 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (12)
- https://doi.org/10.1143/jjap.20.2429
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Low Energy Ion Beam EtchingJournal of the Electrochemical Society, 1981
- Ion enhanced gas-surface reactions: A kinetic model for the etching mechanismSurface Science, 1981
- Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ionSurface Science, 1981
- Chemical sputtering of fluorinated siliconPhysical Review B, 1981
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979