Organometallic Vapor Phase Epitaxial Growth of In1-xGaxAsyP1-y on GaAs
- 1 March 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (3A), L191
- https://doi.org/10.1143/jjap.22.l191
Abstract
In1-x Ga x As y P1-y (0.5≤x≤0.9, 0≤y≤0.55) layers have been grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy using triethylindium (TEIn), triethylgallium (TEGa), arsine (AsH3) and phosphine (PH3). The surface morphology of the layers is mirror-like and the photoluminescence intensity is comparable to that of InGaP grown on GaAs by the same technique. The relationship between the fraction of AsH3 flow and the solid fraction of As, y, is also mentioned.Keywords
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