Spin effects in p+-i-n+a-Si:H cells; photovoltaic detected magnetic resonance (PDMR)

Abstract

This paper reports spin-dependent photovoltaic effects in p⁺-i-n⁺ a-Si:H cells. The preliminary results are important for two reasons. Firstly, the method of photovoltaic detected magnetic resonance (PDMR) complements the well known optically detected magnetic resonance (ODMR) technique as a means for investigating recombination processes in these devices, particularly since it is sensitive to all radiative and non-radiative processes. Secondly, the remarkable sensitivity of PDMR even up to room temperature suggests that the method is suitable for routine assessment of both amorphous and crystalline photovoltaic junctions and barrier devices.