Photoexcited resonance-enhanced nitrogen-trap GaAs1-xPx:N laser
- 1 February 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (2), 379-383
- https://doi.org/10.1109/jqe.1973.1077464
Abstract
No abstract availableKeywords
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