Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films
- 1 February 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (2), 861-868
- https://doi.org/10.1063/1.328850
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si filmsApplied Physics Letters, 1980
- Shallow silicide-to-silicon contacts: The case of amorphous-Pd80Si20–to–siliconApplied Physics Letters, 1980
- Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloysApplied Physics Letters, 1980
- Shallow silicide contactJournal of Applied Physics, 1980
- Contact reaction between Si and Pd-W alloy filmsJournal of Applied Physics, 1979
- Silicide formation with Pd-V alloys and bilayersJournal of Applied Physics, 1979
- Transmission electron microscopy of cross sections of large scale integrated circuitsIEEE Transactions on Electron Devices, 1976
- Thermal stability of thin PtSi films on silicon substratesJournal of Applied Physics, 1972
- Metallurgical properties and electrical characteristics of palladium silicide-silicon contactsSolid-State Electronics, 1971
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970