Growth mechanisms of SiC on α-SiC(0001) prepared by solid-source molecular beam epitaxy
- 1 January 1999
- book chapter
- Published by Springer Nature
- p. 87-100
- https://doi.org/10.1007/bfb0107610
Abstract
No abstract availableKeywords
This publication has 55 references indexed in Scilit:
- Homoepitaxial SiC Growth by Molecular Beam EpitaxyPhysica Status Solidi (b), 1997
- Heterocrystalline Structures: New Types of Superlattices?Physical Review Letters, 1995
- Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxyApplied Physics Letters, 1994
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiCJournal of Materials Research, 1993
- Electrical and optical characterization of SiCPhysica B: Condensed Matter, 1993
- Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxyApplied Physics Letters, 1992
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbideProceedings of the IEEE, 1991
- MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junctionJournal of Crystal Growth, 1987
- Progress in controlling the growth of polytypic crystalsProgress in Crystal Growth and Characterization, 1983