Low energy ion induced damage in silicon at 50 K
- 1 February 1976
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 132, 281-284
- https://doi.org/10.1016/0029-554x(76)90746-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A comparison of the radiation damage produced in gallium arsenide by monatomic and diatomic arsenic implantsRadiation Effects, 1975
- Energy density and time constant of heavy-ion-induced elastic-collision spikes in solidsApplied Physics Letters, 1974
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Some new aspects for the evaluation of disorder profiles in silicon by backscatteringRadiation Effects, 1973
- Directional effects as observed by the channeling effect technique in ion induced radiation damage in GaAsRadiation Effects, 1973
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- Ionization, thermal, and flux dependences of implantation disorder in siliconRadiation Effects, 1971
- ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMSApplied Physics Letters, 1969
- Displacement Thresholds in SemiconductorsJournal of Applied Physics, 1959