In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy
- 1 December 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 166, 155-162
- https://doi.org/10.1016/0040-6090(88)90376-8
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxyApplied Physics Letters, 1988
- Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAsApplied Physics Letters, 1987
- Molecular-beam epitaxial growth and characterization of pseudomorphic GaInAs/AlInAs modulation-doped heterostructuresJournal of Vacuum Science & Technology B, 1987
- X-ray study of misfit strain relaxation in lattice-mismatched heterojunctionsApplied Physics Letters, 1986
- Ga0.47In0.53As JFETs and MESFETs with OM-VPE-grown GaAs surface layersElectronics Letters, 1986
- High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Electron Device Letters, 1985
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- A new Ga0.47In0.53As field-effect transistor with a lattice-mismatched GaAs gate for high-speed circuitsIEEE Electron Device Letters, 1985
- Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profilingApplied Physics Letters, 1983
- Double heterostructure Ga0.47In0.53As MESFETs by MBEIEEE Electron Device Letters, 1980