X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions
- 27 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17), 1071-1073
- https://doi.org/10.1063/1.97478
Abstract
High-resolution x-ray diffraction measurements have been carried out in AlxGa1−xAs and InxGa1−xAs grown by the molecular beam epitaxy method on (001) GaAs substrates. The thin epitaxial layers in these lattice-mismatched semiconductor single heterojunctions are uniformly distorted and there is an elastic limit for large x. The epitaxial layer is affected by a thick substrate even over the elastic limit, i.e., the epitaxial layer still shows a strained state beyond the elastic limit. The relationship between the misfit strain and the lattice distortion is discussed.Keywords
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