Mechanisms of implant damage annealing and transient enhanced diffusion in Si
- 5 December 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (23), 2981-2983
- https://doi.org/10.1063/1.112483
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Reactions of point defects and dopant atoms in siliconPhysical Review Letters, 1992
- Experiments on atomic-scale mechanisms of diffusionPhysical Review Letters, 1991
- Transient diffusion of low-concentration B in Si due to 29Si implantation damageApplied Physics Letters, 1990
- Rapid annealing and the anomalous diffusion of ion implanted boron into siliconApplied Physics Letters, 1987
- Influence of Damage Depth Profile on the Characteristics of Shallow p+/n Implanted JunctionsPhysica Status Solidi (a), 1986