A method to determine bulk lifetime and diffusion coefficient of minority carriers; application to n-type LPE GaP
- 1 January 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (1), 40-42
- https://doi.org/10.1063/1.89205
Abstract
It is shown that the bulk lifetime and diffusion coefficient of minority carriers in semiconductor layers can accurately be determined from the dependence of near‐band‐edge exciton‐luminescence decay on layer thickness. This method is applied to n‐type LPE GaP using laser‐pulse excitation. As we expected, large differences are observed between the actual bulk lifetime and the measured effective lifetime: the largest ratio amounts to a factor of 4. Bulk lifetimes as high as 5 μs and hole diffusion coefficients between 2.6 and 3.1 cm2/s are found at room temperature.Keywords
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