Ion-beam induced atomic mixing at the Si02/Si interface studied by means of monte carlo simulation
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 62 (3), 231-236
- https://doi.org/10.1080/00337578208222797
Abstract
Using a Monte Carlo simulation method, we have investigated the effects of ion-beam induced mixing at the silicon oxide/silicon interface. The simulation results are discussed and compared to those obtained by solving the associated Boltzmann transport equation using the discrete ordinate method as done by Christel and Gibbons.1 We have found that both methods yield similar results if a displacement threshold Ed=3 keV, as used by these authors, is assumed. In addition, subsequent effects on oxygen recoil yields and through-interface recoil profiles which arise from the choice of a lower threshold displacement energy, Ed = 20 eV are reported here.Keywords
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