A comprehensive computer program for ion penetration in solids

Abstract

Computer codes previously set up to investigate charged particles interaction in matter have been matched together to obtain a comprehensive program to simulate penetration phenomena occurring both in amorphous and along the most important crystal directions in silicon. The model can be used to simulate implantation processes in silicon crystals coated with an amorphous or polycrystalline layer. The model is based on the binary collision approximation, and includes thermal vibrations and impact parameter dependence of the stopping power for the crystal ordered case. A mechanism to take into account the progressive increase of disorder in the lattice as a consequence of ion implantation is available. Calculations were performed for a large variety of physical conditions, the most significant of which are reported to display the potentialities of the model.