Characterization of large diameter silicon by low-bias charge collection analysis in Si(Li) pin diodes
- 15 August 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 199 (3), 623-630
- https://doi.org/10.1016/0167-5087(82)90164-8
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Interpretation of C-V measurements for determining the doping profile in semiconductorsSolid-State Electronics, 1980
- Thin Window Si(Li) Detectors for the ISEE-C TelescopeIEEE Transactions on Nuclear Science, 1978
- The formation of swirl defects in silicon by agglomeration of self-interstitialsJournal of Crystal Growth, 1977
- Melting of silicon crystals and a possible origin of swirl defectsJournal of Crystal Growth, 1977
- Effect of low cooling rates on swirls and striations in dislocation-free silicon crystalsJournal of Crystal Growth, 1976
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- The theory of compensation in lithium drifted semiconductor detectorsNuclear Instruments and Methods, 1969
- Study of Surface Effects in Thick Lithium Drifted Silicon Radiation DetectorsIEEE Transactions on Nuclear Science, 1964
- Diffusion Rate of Li in Si at Low TemperaturesPhysical Review B, 1960
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960