Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal–organic chemical-vapor deposition

Abstract

We propose and demonstrate a seeded self-assembling growth technique for the fabrication of quantum dot structures by metal–organic chemical-vapor deposition. GaAs quantum dots were grown at the bottom of two-dimensional V-groove (2DVG) structures, which were composed of $\text{(111)A}$ and $\text{(111)B}$ facets on a GaAs(100) substrate. The 2DVG was grown by selective growth on a ${\mathrm{SiO}}_{\mathrm{2}}$ patterned substrate. It was found that vertical GaAs quantum wires were also simultaneously formed in the 2DVGs. Using this technique, the stacking of GaAs quantum dots was realized. Photoluminescence and cathodoluminescence from each structure evidenced the formation of both the quantum wires and the quantum dots.