Photocurrent multiplication in amorphous silicon carbide films
- 14 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (16), 1992-1994
- https://doi.org/10.1063/1.106160
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Up-conversion of red light to green by a new type of light transducer using organic electroluminescent diode combined with photoresponsive amorphous silicon carbideApplied Physics Letters, 1991
- Spatially addressable light transducer using an organic electroluminescent diode combined with amorphous silicon carbide film as an electron photoinjecting electrodeApplied Physics Letters, 1990
- Amorphous silicon/silicon carbide superlattice avalanche photodiodesIEEE Transactions on Electron Devices, 1988
- Avalanche Multiplication of Photo-Generated Carriers in Amorphous Semiconductor, and its Application to Imaging DeviceMRS Proceedings, 1988
- Synthesis of Highly Photosensitive a-SiC:H Films at High Deposition Rate by Plasma Decomposition of SiH4 and C2H2MRS Proceedings, 1988
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981
- Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar CellJapanese Journal of Applied Physics, 1981
- Amorphous-silicon field-effect device and possible applicationElectronics Letters, 1979
- Amorphous silicon solar cellsIEEE Transactions on Electron Devices, 1977
- Substitutional doping of amorphous siliconSolid State Communications, 1975