GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A), L599
- https://doi.org/10.1143/jjap.23.l599
Abstract
A new molecular beam epitaxy (MBE) system coupled with a 100 kV maskless ion implanter via an ultrahigh vacuum (UHV) sample transfer module was constructed. This system can grow epitaxial layers with ion beam pattern-implantation without exposing a sample surface to the outer atmosphere. Buried Be implanted layers in MBE grown GaAs were fabricated using this apparatus. Because of the contamination-free UHV growth process, the photoluminescent intensity depth profile of the grown crystal showed no degradation at the interface where the MBE growth was interrupted for the ion implantation process.Keywords
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