Fluorine-enhanced plasma growth of native layers on silicon
- 15 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (12), 999-1002
- https://doi.org/10.1063/1.91657
Abstract
Fluorine‐enhanced low‐temperature (⩽600 °C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine‐enhanced‐plasma‐grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.Keywords
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