I n s i t u pattern formation and high quality overgrowth by gas source molecular beam epitaxy

Abstract

We demonstrate a combination of focused Ga beam writing and dry etching techniques to pattern InP wafers in a common vacuum chamber. Surface steps on the order of 1000 Å can be efficiently prepared using moderate Ga ion fluences. The implanted areas exhibit a faster etch rate, even for Ga doses below ∼10¹⁴ cm⁻². The implantation damage is removed by the low‐energy Cl‐assisted ion beam etching as shown by the high quality of p‐n junctions grown on etched surfaces. GaInAs/InP heterostructures grown on in situ patterned substrates show excellent morphology and high luminescence efficiency.