Mg+ and Be+ ion implantation into AlxGa1−xAs
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 711-718
- https://doi.org/10.1016/0167-5087(83)90872-4
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Correlation of electrical carrier and atomic profiles of S implants in GaAsJournal of Applied Physics, 1982
- Annealing redistribution of Cr implants in GaAs as a function of ion fluence, and the Cr saturation densityRadiation Effects, 1982
- Photoluminescence of Ge-doped AlxGa1−xAs grown by liquid phase epitaxyJournal of Applied Physics, 1980
- Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxyJournal of Applied Physics, 1980
- Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAsJournal of Applied Physics, 1980
- Monolithic integration of an injection laser and a metal semiconductor field effect transistorApplied Physics Letters, 1979
- Doping and electrical properties of Mg in LPE AlxGa1−xAsJournal of Applied Physics, 1979
- Diffusion studies of Be-implanted GaAs by SIMS and electrical profilingSolid State Communications, 1978
- Photoluminescence from Mg-implanted GaAsApplied Physics Letters, 1977
- Mg and Be Ion Implanted GaAsJournal of Applied Physics, 1972