Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

26 July 1999

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 75 (4), 575-577
https://doi.org/10.1063/1.124446

Abstract

We report fabrication and characterization of p-channel metal–ferroelectric-metal–insulator–semiconductor (MFMIS) field-effect transistors (FETs) using the Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures. It is shown that SrTa2O6/SiON stacked layer is suitable as an “I” layer in the MFMIS structure, because the SrTa2O6/SiON/Si structure has low leakage current and good interface properties. We also show that by using a small MFM capacitor on a large MIS structure, a large memory window of 3.0 V can be obtained. Furthermore, it is found that the data retention characteristics have been improved for Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si MFMIS-FETs.

Keywords

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