Metallic impurity donor band in compensated n-type GaAs
- 10 December 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (34), 7043-7048
- https://doi.org/10.1088/0022-3719/15/34/016
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Metal-insulator transition in doped semiconductorsPhilosophical Magazine Part B, 1980
- Effect of compensation and correlation on conduction near the metal non-metal transitionPhilosophical Magazine Part B, 1980
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- Very low threshold Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Localization of Electrons in Impure Semiconductors by a Magnetic FieldReviews of Modern Physics, 1968
- Mobility of Electrons in Compensated Semiconductors. II. TheoryPhysical Review B, 1967
- ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORSCanadian Journal of Physics, 1956
- Impurity Band Conduction in Germanium and SiliconPhysical Review B, 1956