Characteristics of rare-earth element erbium implanted in silicon
- 31 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (5), 432-433
- https://doi.org/10.1063/1.101888
Abstract
Rare‐earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin‐orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.Keywords
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