Application of molecular-beam epitaxial layers to heterostructure lasers
- 1 July 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 11 (7), 467-470
- https://doi.org/10.1109/jqe.1975.1068642
Abstract
GaAs-Al x Ga 1-x As double-heterostructure (DH) lasers with Si-doped n-type active layers have been prepared by molecular-beam epitaxy (MBE) and the laser properties evaluated. With 0.2-μm-thick active layers and 300-μm cavity lengths, typical room-temperature threshold current densities J th of 5.0 \times 10^{3} A/cm 2 and best values of 2.5 \times 10^{3} A/cm 2 have been obtained. Stripe-geometry devices were run CW up to 9°C. Photoluminescence (PL) studies of single layers grown with the donors Si, Ge, and Sn show that the luminescent intensity for MBE n-type layers depends on the substrate temperature during growth. The PL intensity for Sn-doped MBE layers was greater than for high-quality Sn-doped liquid-phase-epitaxial layers.Keywords
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