Reliability Study of Plasma Etching Damage in ULSI Process
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processingIEEE Electron Device Letters, 1994
- Plasma-based dry etching techniques in the silicon integrated circuit technologyIBM Journal of Research and Development, 1992
- Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradationIEEE Transactions on Electron Devices, 1989
- Oxide Breakdown due to Charge Accumulation during Plasma EtchingJournal of the Electrochemical Society, 1987