Low-field transient behavior of MNOS devices
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (2), 664-666
- https://doi.org/10.1063/1.322630
Abstract
Evidence for the transition from Fowler‐Nordheim injection to a trap‐assisted tunneling mechanism in thin oxide MNOS devices under low applied voltages has been found from transient measurements. The agreement between theoretical prediction and experimental results is very good.Keywords
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