Room-temperature growth of AlN thin films by laser ablation
- 4 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18), 2234-2236
- https://doi.org/10.1063/1.107040
Abstract
Excimer laser ablation of compressed AlN powder has been used to grow thin AlN films at room temperature on a variety of substrates. The films have a band gap of 6.15 eV as measured by UV absorption. Examination with a scanning electron microscope and an optical microscope shows that the films are smooth. The IR spectrum has an absorption characteristic of AlN. Growth rates are extremely rapid, exceeding 70 nm/min.Keywords
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