Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3), L173-175
- https://doi.org/10.1143/jjap.20.l173
Abstract
Epitaxial aluminum nitride (AlN) films have been grown on (111), (110) and (100)-oriented Si substrates using metalorganic chemical vapor deposition (MO-CVD). We found that (0001)-oriented AlN films were grown on the above three planes of Si substrates.Keywords
This publication has 7 references indexed in Scilit:
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1981
- Reactive molecular beam epitaxy of aluminium nitrideJournal of Vacuum Science and Technology, 1979
- Growth and properties of silicon films on aluminum-nitride films on sapphireJournal of Applied Physics, 1976
- Chemical and plasmachemical vapour deposition of aluminium nitride layersCrystal Research and Technology, 1976
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- Epitaxially grown AlN and its optical band gapJournal of Applied Physics, 1973
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971