Photovoltaic effects in temperature-dependent Fermi-level movement for GaAs(110)

Abstract

This paper describes how illumination influences the measured band bending when different amounts of Ti and Bi are deposited on n-type and p-type GaAs(110) with different dopant concentrations for temperatures 20≤T≤300 K. Synchrotron radiation photoemission results show that photon fluxes used routinely in Schottky-barrier formation studies induce measurable photovoltages. These photovoltages depend on the amount of band bending, the type of doping, the dopant concentration, and the metal overlayer. These photovoltages contribute a nonequilibrium component of band bending, especially at low temperature.