Barrier height study on Au-InP Schottky diodes
- 16 March 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 46 (1), K55-K59
- https://doi.org/10.1002/pssa.2210460167
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Controlled barrier height InP Schottky diodes prepared by sulfur diffusionApplied Physics Letters, 1977
- Electrical characteristics of Au/Ti-(n-type) InP Schottky diodesJournal of Physics D: Applied Physics, 1977
- Correlation between open-circuit voltage and interface parameters at the Au-CdS illuminated contactPhysica Status Solidi (a), 1976
- InP Schottky-gate field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Outlooks for GaAs terrestrial photovoltaicsJournal of Vacuum Science and Technology, 1975
- Surface characterisation of indium phosphideSurface Science, 1975
- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- p−InP/n−CdS solar cells and photovoltaic detectorsApplied Physics Letters, 1975
- Schottky-barrier solar-cell calculationsApplied Physics Letters, 1974
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963