Donor formation in silicon owing to ion implantation of the rare earth metal erbium
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 4 (1-4), 71-74
- https://doi.org/10.1016/0921-5107(89)90218-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Nitrogen related deep electron trap in GaPJournal of Applied Physics, 1983
- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981