Low-resistance AuZn gate ohmic contacts for InP JFETs
- 29 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2), 127-133
- https://doi.org/10.1016/0038-1101(88)90119-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Interaction of Au/Zn/Au sandwich contact layers with AIIIBV compound semiconductorsSolid-State Electronics, 1986
- Hot-plate alloying for ohmic contacts to GaAsIEEE Transactions on Electron Devices, 1984
- Planar fully ion implanted InP power junction FET'sIEEE Electron Device Letters, 1984
- Electroplating used for ohmic contactsSolid-State Electronics, 1983
- Au/Be ohmic contacts to p-type indium phosphideSolid-State Electronics, 1982
- Very low resistance ohmic contacts on p-type InP by direct platingApplied Physics Letters, 1982
- Low-resistance ohmic contacts to p-InPElectronics Letters, 1982
- Low resistance ohmic contacts to n- and p-InPSolid-State Electronics, 1981
- Ohmic contacts to p-type InP using Be-Au metallizationApplied Physics Letters, 1980
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967