Modulated Hall-Effect Techniques for the Study of Transport Properties of Microcrystalline Silicon with Different Grain Sizes
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electrical properties of heavily doped μc-Si:HJournal of Applied Physics, 1995
- Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow dischargeApplied Physics Letters, 1994
- Carrier transport in polycrystalline silicon films deposited by a layer-by-layer techniqueJournal of Applied Physics, 1994
- Annealing studies of the microcrystalline silicon systemJournal of Non-Crystalline Solids, 1993
- Nucleation and Growth in Vicinity of Growing Surface in Making Microcrystalline SiliconMRS Proceedings, 1990
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975