Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge
- 14 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (20), 2588-2590
- https://doi.org/10.1063/1.112604
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Doped microcrystalline silicon growth by high frequency plasmasApplied Physics Letters, 1994
- Plasma deposition of microcrystalline silicon: the selective etching modelJournal of Non-Crystalline Solids, 1993
- Surface controlled plasma deposition and etching of silicon near the chemical equilibriumJournal of Non-Crystalline Solids, 1993
- Frequency effects in silane plasmas for plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1992
- Influences of a high excitation frequency (70 MHz) in the glow discharge technique on the process plasma and the properties of hydrogenated amorphous siliconJournal of Applied Physics, 1992
- Temperature dependence of the crystallite size and crystalline fraction of microcrystalline silicon deposited from silane by plasma CVDJournal of Non-Crystalline Solids, 1991
- Deposition of phosphorus doped microcrystalline silicon below 70 °C at 70 MHzJournal of Non-Crystalline Solids, 1991
- Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD TechniqueMRS Proceedings, 1989
- Statistical Model of Chemical Reactions in Nonisothermal Low Pressure PlasmaThe Journal of Chemical Physics, 1972